4‐2: Student Paper: High‐Performance, Coplanar Polycrystalline InGaO Thin‐Film Transistor for Large‐Area, High‐Resolution AMOLED Display
Author:
Affiliation:
1. Advanced Display Research Center and Department of Information Display Kyung Hee University Seoul 130-701 Korea
2. Advanced Technology Research Laboratories Idemitsu Kosan Co., Ltd. 1280 Kami-izumi Sodegaura Chiba 299-0293 Japan
Publisher
Wiley
Subject
General Medicine
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.15404
Reference26 articles.
1. Highly Improved Quasi-Two-Dimensional Oxide Transistors via Non-centrosymmetric Nitrogen Dioxide Treatment, toward Extremely Low Process Temperature and Operant Self-Aligned Coplanar Structure
2. Polycrystalline Indium Gallium Tin Oxide Thin-Film Transistors With High Mobility Exceeding 100 cm2/Vs
3. Present status of amorphous In–Ga–Zn–O thin-film transistors
4. High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering
5. Indium Oxide Thin-Film Transistors Fabricated by RF Sputtering at Room Temperature
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2. TFT Characteristics of High Mobility Poly-Crystalline Oxide;2024 31st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD);2024-07-02
3. P‐28: High‐speed Oscillator using Polycrystalline InGaO TFTs by Spray Pyrolysis on Polyimide Substrate for Flexible Electronics;SID Symposium Digest of Technical Papers;2024-06
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