8‐1: <i>Invited Paper:</i> High Mobility Poly‐Crystalline Oxide TFT Achieving Mobility over 50 cm<sup>2</sup>/Vs and High Level of Uniformity on the Large Size Substrates-Reference-Cited by-同舟云学术

8‐1: Invited Paper: High Mobility Poly‐Crystalline Oxide TFT Achieving Mobility over 50 cm²/Vs and High Level of Uniformity on the Large Size Substrates

Published:2023-06 Issue:1 Volume:54 Page:78-81
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Tsubuku Masashi¹,Watakabe Hajime¹,Sasaki Toshinari¹,Tamaru Takaya¹,Onodera Ryo¹,Mochizuki Marina¹,Kimura Hiroyuki¹,Kawashima Emi²,Sasaki Daichi²,Tsuruma Yuki²

Affiliation:

1. Japan Display Inc. Chiba Japan

2. Idemitsu Kosan Co., Ltd. Chiba Japan

Abstract

We have successfully developed stable poly‐crystalline oxide semiconductor (Poly‐OS) as channels of TFT on Gen.6 glass substrates. This technology has significantly improved mobility and stability at the same time, achieving both extremely low off‐state current similar to conventional oxide TFTs and high on‐state current equivalent to LTPS TFTs.

Publisher

Wiley

Subject

General Medicine

Reference6 articles.

1. 39‐2: Development of Advanced LTPS TFT Technology for Low Power Consumption and Narrow Border LCDs

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