Gate-Controlled Donor Activation in Silicon Nanowires-Reference-Cited by-同舟云学术

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Gate-Controlled Donor Activation in Silicon Nanowires

Published:2010-08-18 Issue:9 Volume:10 Page:3791-3795
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Yan Binghai¹,Frauenheim Thomas¹,Gali Ádám²³

Affiliation:

1. Bremen Center for Computational Materials Science, Universität Bremen, Am Fallturm 1, 28359 Bremen, Germany

2. Department of Atomic Physics, Budapest University of Technology and Economics, Budapest, Budafoki út 8, H-1111, Hungary

3. Research Institute for Solid State Physics and Optics, Hungarian Academy of Sciences, Budapest, POB 49, H-1525, Hungary

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl1027292

Reference31 articles.

1. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

2. High Performance Silicon Nanowire Field Effect Transistors

3. High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

4. Impact of the vertical SOI 'DELTA' structure on planar device technology

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1. Self-modulation doping effect in the high-mobility layered semiconductor Bi2O2Se;Physical Review B;2018-06-25

2. Ab Initio Study of Phosphorus Donors Acting as Quantum Bits in Silicon Nanowires;Nano Letters;2012-06-15

3. Doping of SiGe core-shell nanowires;Journal of Computational Electronics;2012-02-24

4. Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires;Nanoscience and Nanotechnology Letters;2011-08-01

5. Stability of Donor-Pair Defects in Si1–xGex Alloy Nanowires;The Journal of Physical Chemistry C;2011-05-12

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