Stability of Donor-Pair Defects in Si1–xGex Alloy Nanowires-Reference-Cited by-同舟云学术

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Stability of Donor-Pair Defects in Si1–xGex Alloy Nanowires

Published:2011-05-12 Issue:21 Volume:115 Page:10345-10350
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Park Ji-Sang¹,Ryu Byungki¹,Chang K. J.¹

Affiliation:

1. Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp111886n

Reference45 articles.

1. Small-Diameter Silicon Nanowire Surfaces

2. Nanowire Crossbar Arrays as Address Decoders for Integrated Nanosystems

3. Epitaxial core–shell and core–multishell nanowire heterostructures

4. Silicon nanowires as efficient thermoelectric materials

5. Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species

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1. External electric field induced band dispersion engineering in Si1−xGex nanowires;Computational Materials Science;2015-05

2. Structural and electronic properties of Si1−xGex alloy nanowires;Journal of Applied Physics;2014-10-21

3. Understanding doping at the nanoscale: the case of codoped Si and Ge nanowires;Journal of Physics D: Applied Physics;2014-09-11

4. Finite-size supercell correction scheme for charged defects in one-dimensional systems;Physical Review B;2014-08-27

5. The effects of B and P impurities on the electronic and optical properties of Si1 − x Ge x nanowires;Semiconductor Science and Technology;2014-06-06

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