Benzoylpivaloylmethanide Precursors for the Chemical Beam Epitaxy of Oxide Thin Films. 1. Synthesis, Characterization, and Use of Yttrium Benzoylpivaloylmethanide-Reference-Cited by-同舟云学术

Benzoylpivaloylmethanide Precursors for the Chemical Beam Epitaxy of Oxide Thin Films. 1. Synthesis, Characterization, and Use of Yttrium Benzoylpivaloylmethanide

Published:1997-01-01 Issue:1 Volume:9 Page:127-134
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Fritsch E.¹,Mächler E.¹,Arrouy F.¹,Orama O.¹,Berke H.¹,Povey I.¹,Willmott P. R.¹,Locquet J.-P.¹

Affiliation:

1. Institute of Inorganic Chemistry, University of Zurich, 8057 Zurich, Switzerland; IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland; V. T. T. Chemical Technology, 02044 VTT, Finland; and Institute of Physical Chemistry, University of Zurich, 8057 Zurich, Switzerland

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm9602510

Reference47 articles.

1. Progress in chemical vapor deposition

2. Growth of GaAs and Al GaAs by chemical beam epitaxy?precursor requirements and recent developments

3. III-V crystal growth of novel layered structures using metalorganic molecular beam epitaxy

4. Compact metalorganic molecular‐beam epitaxy growth system

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