Growth of GaAs and Al GaAs by chemical beam epitaxy?precursor requirements and recent developments
Author:
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Reference28 articles.
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. ChemInform Abstract: Growth of GaAs and AlGaAs by Chemical Beam Epitaxy - Precursor Requirements and Recent Developments;ChemInform;2010-08-20
2. Chemical deposition of PbS on a series of ω-functionalised self-assembled monolayers;Journal of Materials Chemistry;1999
3. Benzoylpivaloylmethanide Precursors for the Chemical Beam Epitaxy of Oxide Thin Films. 1. Synthesis, Characterization, and Use of Yttrium Benzoylpivaloylmethanide;Chemistry of Materials;1997-01-01
4. The Colloid Chemical Approach to Nanostructured Materials;Advanced Materials;1995-07
5. Developments in metalorganic precursors for vapour phase epitaxy;Journal of Crystal Growth;1994-12
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