High-Density Arrays of InGaN Nanorings, Nanodots, and Nanoarrows Fabricated by a Template-Assisted Approach-Reference-Cited by-同舟云学术

High-Density Arrays of InGaN Nanorings, Nanodots, and Nanoarrows Fabricated by a Template-Assisted Approach

Published:2006-05-19 Issue:23 Volume:110 Page:11081-11087
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Wang Yadong¹,Zang Keyan¹,Chua Soojin¹,Sander Melissa S.¹,Tripathy Sudhiranjan¹,Fonstad Clifton G.¹

Affiliation:

1. Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576, Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, and Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp060419x

Reference39 articles.

1. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

2. Nitride-based semiconductors for blue and green light-emitting devices

3. The Blue Laser Diode

4. Multidimensional quantum well laser and temperature dependence of its threshold current

5. Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Pressure Bulk Synthesis of InN by Solid-State Reaction of Binary Oxide in a Multi-Anvil Apparatus;Inorganic Chemistry;2023-03-16

2. Recent progress in group III-nitride nanostructures: From materials to applications;Materials Science and Engineering: R: Reports;2020-10

3. Micrometer scale InGaN green light emitting diodes with ultra-stable operation;Applied Physics Letters;2020-07-06

4. Evaluation of the optical properties of the InGaN/GaN quantum well nanopillar arrays prepared via MOVPE approach;Optik;2018-07

5. Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates;Optical Materials Express;2017-01-06