Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates-Reference-Cited by-同舟云学术

Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates

Published:2017-01-06 Issue:2 Volume:7 Page:376
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

El Gmili Y.,Bonanno P. L.,Sundaram S.,Li X.,Puybaret R.,Patriarche G.,Pradalier C.,Decobert J.,Voss P. L.,Salvestrini J-P.,Ougazzaden A.

Funder

Agence Nationale de la Recherche (ANR)

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

2. 444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer

3. Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates

4. High internal and external quantum efficiency InGaN/GaN solar cells

5. High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy

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3. Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE;CrystEngComm;2018

4. Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates;Nanotechnology;2017-04-19