Quasi-1-Dimensional Dual-Gate MoS<sub>2</sub> Field-Effect Transistors with 50 nm Channel Length-Reference-Cited by-同舟云学术

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Quasi-1-Dimensional Dual-Gate MoS₂ Field-Effect Transistors with 50 nm Channel Length

Published:2023-08-07 Issue:16 Volume:6 Page:15048-15053
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Zhou Yuchen¹^ORCID,Yoon Chankeun¹^ORCID,Vasishta Sudhanva¹,Xu Xin¹^ORCID,Liang Kelly¹,Dodabalapur Ananth¹^ORCID

Affiliation:

1. Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78758, United States

Funder

W. M. Keck Foundation

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c02537

Reference39 articles.

1. How Good Can Monolayer MoS2 Transistors Be?

2. Single-Layer MoS2 Electronics

3. Transition metal dichalcogenide MoS 2 field-effect transistors for analog circuits: A simulation study

4. Double-Gate MoS2 Field-Effect Transistor with a Multilayer Graphene Floating Gate: A Versatile Device for Logic, Memory, and Synaptic Applications

5. Single-layer MoS2 transistors

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