Transition metal dichalcogenide MoS 2 field-effect transistors for analog circuits: A simulation study-Reference-Cited by-同舟云学术

Transition metal dichalcogenide MoS 2 field-effect transistors for analog circuits: A simulation study

Published:2018-05 Issue: Volume:88 Page:110-119
ISSN:1434-8411
Container-title:AEU - International Journal of Electronics and Communications
language:en
Short-container-title:AEU - International Journal of Electronics and Communications

Author:

Wei Baolin,Lu Chao

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

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