Double-Gate MoS2 Field-Effect Transistor with a Multilayer Graphene Floating Gate: A Versatile Device for Logic, Memory, and Synaptic Applications
Author:
Affiliation:
1. Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
Funder
Semiconductor Research Corporation
Division of Civil, Mechanical and Manufacturing Innovation
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.0c08802
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