Plasma-Engineered Amorphous Metal Oxide Nanostructure-Based Low-Power Highly Responsive Phototransistor Array for Next-Generation Optoelectronics-Reference-Cited by-同舟云学术

Plasma-Engineered Amorphous Metal Oxide Nanostructure-Based Low-Power Highly Responsive Phototransistor Array for Next-Generation Optoelectronics

Author:

Rho Hyun Yeol¹,Bala Arindam¹^ORCID,Sen Anamika¹,Jeong Uisik²³,Shim Junoh¹,Oh Joo on¹,Ju Younghyun¹,Naqi Muhammad¹,Kim Sunkook¹^ORCID

Affiliation:

1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea

2. DRAM Process Architecture Team, Samsung Electronics Company, Pyeongtaek 17786, South Korea

3. Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea

Funder

Ministry of Education

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

Reference38 articles.

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