Growth of Nanometer-Thick γ-InSe on Si(111) 7 × 7 by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices-Reference-Cited by-同舟云学术

Growth of Nanometer-Thick γ-InSe on Si(111) 7 × 7 by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices

Published:2023-08-04 Issue:16 Volume:6 Page:15029-15037
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Liu Derrick S. H.¹^ORCID,Hilse Maria¹²,Lupini Andrew R.³,Redwing Joan M.¹²^ORCID,Engel-Herbert Roman⁴

Affiliation:

1. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

2. 2D Crystal Consortium Material Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

3. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37923, United States

4. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Berlin 10117, Germany

Funder

Energy Frontier Research Centers

Basic Energy Sciences

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c02602

Reference55 articles.

1. Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs

2. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

3. Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse

4. Two-Dimensional CIPS-InSe van der Waal Heterostructure Ferroelectric Field Effect Transistor for Nonvolatile Memory Applications

5. Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition

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