Vanadium Metal Doping of Monolayer MoS2 for p-Type Transistors and Fast-Speed Phototransistors
Author:
Affiliation:
1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People’s Republic of China
Funder
Natural Science Foundation of Hubei Province
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.4c03154
Reference51 articles.
1. Transition‐Metal Substitution Doping in Synthetic Atomically Thin Semiconductors
2. Nanoscale electronic devices based on transition metal dichalcogenides
3. Solution-Processed 2D Transition Metal Dichalcogenides: Materials to CMOS Electronics
4. Patterned Growth of Transition Metal Dichalcogenide Monolayers and Multilayers for Electronic and Optoelectronic Device Applications
5. Controlled Synthesis and Accurate Doping of Wafer‐Scale 2D Semiconducting Transition Metal Dichalcogenides
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