Nanoscale electronic devices based on transition metal dichalcogenides-Reference-Cited by-同舟云学术

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Nanoscale electronic devices based on transition metal dichalcogenides

Published:2019-06-03 Issue:3 Volume:6 Page:032004
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Zhu Wenjuan^ORCID,Low Tony,Wang Han,Ye Peide,Duan Xiangfeng

Funder

Division of Materials Research

Division of Electrical, Communications and Cyber Systems

National Science Foundation

Office of Naval Research

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/ab1ed9/pdf

Reference187 articles.

1. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

2. Electrically tunable low-density superconductivity in a monolayer topological insulator

3. Gate-induced superconductivity in a monolayer topological insulator

4. 2D materials and van der Waals heterostructures

5. An ultrafast symmetry switch in a Weyl semimetal

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1. 2D Atomic‐Molecular Heterojunctions toward Brainoid Applications;Macromolecular Rapid Communications;2024-08-05

2. Simulation-Based Investigation of Curtain Gas Effect on Metal-Organic Chemical Vapor Deposition Growth of Two-Dimensional Transition Metal Dichalcogenides;Crystal Growth & Design;2024-07-08

3. Enhanced Transport Parameters of Transition Metal Dichalcogenide-Based Double-Barrier Magnetic Tunnel Junction;Journal of Electronic Materials;2024-07-05

4. Small Feature‐Size Transistors Based on Low‐Dimensional Materials: From Structure Design to Nanofabrication Techniques;Advanced Science;2024-06-17

5. 2D Dielectric Enhancement of Ion Coulomb Drag Amplification in Nanofluidics;The Journal of Physical Chemistry C;2024-06-04

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