Transition‐Metal Substitution Doping in Synthetic Atomically Thin Semiconductors-Reference-Cited by-同舟云学术

Transition‐Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

Published:2016-09-20 Issue:44 Volume:28 Page:9735-9743
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Gao Jian¹,Kim Young Duck²,Liang Liangbo³⁴,Idrobo Juan Carlos⁴,Chow Phil¹,Tan Jiawei¹,Li Baichang¹,Li Lu⁵,Sumpter Bobby G.⁴,Lu Toh‐Ming³,Meunier Vincent³,Hone James²,Koratkar Nikhil¹⁵

Affiliation:

1. Department of Materials Science and Engineering Rensselaer Polytechnic Institute 110 8^th Street Troy NY 12180 USA

2. Department of Mechanical Engineering Columbia University New York NY 10027 USA

3. Department of Physics Applied Physics and Astronomy Rensselaer Polytechnic Institute 110 8th Street Troy NY 12180 USA

4. Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA

5. Department of Mechanical Aerospace and Nuclear Engineering Rensselaer Polytechnic Institute 110 8^th Street Troy NY 12180 USA

Funder

National Science Foundation

New York State Foundation for Science, Technology and Innovation

Rensselaer Polytechnic Institute

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201601104

Reference50 articles.

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3. Exciton Binding Energy of Monolayer WS2

4. Exciton Binding Energy and Nonhydrogenic Rydberg Series in MonolayerWS2

5. Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions

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