Role of Ga Vacancy on a Multilayer GaTe Phototransistor
Author:
Affiliation:
1. National Center for Nanoscience and Technology, Beijing 100190, People’s Republic of China
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/nn500782n
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