Substantial Energy Band Modulation of Semiconducting Hexagonal GaTe Quantum Wells by Layer Thickness and Mirror Twin Boundaries-Reference-Cited by-同舟云学术

Substantial Energy Band Modulation of Semiconducting Hexagonal GaTe Quantum Wells by Layer Thickness and Mirror Twin Boundaries

Published:2024-07-29 Issue:31 Volume:18 Page:20591-20599
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Quan Wenzhi¹²,Lu Yue³^ORCID,Wu Qilong²,Cheng Yujin²,Hu Jingyi¹²,Zhang Zehui²,Wang Jialong²,Li Zhenzhu⁴^ORCID,Wang Lili⁵,Ji Qingqing³^ORCID,Zhang Yanfeng¹²^ORCID

Affiliation:

1. Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People’s Republic of China

2. School of Materials Science and Engineering, Peking University, Beijing 100871, People’s Republic of China

3. School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People’s Republic of China

4. Department of Materials, Imperial College London, London SW7 2AZ, U.K.

5. State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, People’s Republic of China

Funder

National Key Research and Development Program of China

Science and Technology Commission of Shanghai Municipality

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.4c05858

Reference43 articles.

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5. Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy