Spin Relaxation in InGaN Quantum Disks in GaN Nanowires-Reference-Cited by-同舟云学术

Spin Relaxation in InGaN Quantum Disks in GaN Nanowires

Published:2011-11-07 Issue:12 Volume:11 Page:5396-5400
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Banerjee Animesh¹,Doğan Fatih²,Heo Junseok¹,Manchon Aurelien²,Guo Wei¹,Bhattacharya Pallab¹

Affiliation:

1. Center for Nanoscale Photonics and Spintronics, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, United States

2. Divison of Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal 23955, Saudi Arabia

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl203091f

Reference33 articles.

1. Spin Physics in Semiconductors

2. Spin coherence and dephasing in GaN

3. No spin polarization of carriers in InGaN

4. On the origin of spin loss in GaMnN/InGaN light-emitting diodes

5. Anisotropic electron spin relaxation in bulk GaN

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