Model for Low-Temperature Growth of Gallium Nitride-Reference-Cited by-同舟云学术

Model for Low-Temperature Growth of Gallium Nitride

Published:2016-08-23 Issue:9 Volume:16 Page:5023-5029
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Wu Chao¹,Yu Jiadong¹,E Yanxiong¹,Luo Yi¹,Hao Zhibiao¹,Wang Jian¹,Wang Lai¹,Sun Changzheng¹,Xiong Bing¹,Han Yanjun¹,Li Hongtao¹

Affiliation:

1. Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

Funder

Ministry of Science and Technology of the People's Republic of China

Tsinghua University

National Natural Science Foundation of China

State Key Laboratory on Integrated Optoelectronics

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.6b00583

Reference35 articles.

1. Flexible Inorganic Nanostructure Light-Emitting Diodes Fabricated on Graphene Films

2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

3. Realization of a High-Performance GaN UV Detector by Nanoplasmonic Enhancement

4. AlGaN/AlN/GaN high-power microwave HEMT

5. High speed growth of device quality GaN and InGaN by RF-MBE

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