First-principle calculations of adsorption of Ga (Al, N) adatoms on the graphene for the van-der-Waals epitaxy-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

First-principle calculations of adsorption of Ga (Al, N) adatoms on the graphene for the van-der-Waals epitaxy

Published:2021-03 Issue: Volume:26 Page:101571
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Yu Jiadong,Hao Zhibiao,Wang Lai,Luo Yi,Wang Jian,Sun Changzheng,Han Yanjun,Xiong Bing,Li Hongtao

Funder

National Key Research and Development Program

Science Challenge Project

National Natural Science Foundation of China

Tsinghua University Initiative Scientific Research Program

Key Lab Program of BNRist

Basic Research Priorities Program of Shenzhen

China Postdoctoral Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference43 articles.

1. Status and future of high-power light-emitting diodes for solid-state lighting;Krames;J. Disp. Technol.,2007

2. Current status of GaN-based solid-state lighting;Nakamura;MRS Bull.,2009

3. Key inventions in the history of nitride-based blue LED and LD;Akasaki;J. Cryst. Growth,2007

4. InGaN-based multi-quantum-well-structure laser diodes;Nakamura;J. Appl. Phys.,1996

5. GaN-based green laser diodes;Lingrong;J. Semicond.,2016

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mass transfer techniques for large-scale and high-density microLED arrays;International Journal of Extreme Manufacturing;2022-11-14

2. Van der Waals coherent epitaxy of GaN and InGaN/GaN multi-quantum-well via a graphene inserted layer;Optical Materials Express;2021-12-01

3. Van der Waals Self-Assembled Silica-Nanosphere/Graphene Buffer Layer for High-Quality Gallium Nitride Growth;Crystal Growth & Design;2021-09-02

4. Transferable InGaN Quantum Well Grown at Low Temperature on Amorphous Substrates by Plasma-Assisted Molecular Beam Epitaxy;Crystal Growth & Design;2021-06-03

5. Low-temperaturevan der waals epitaxy of GaN films on graphene through AlN buffer by plasma-assisted molecular beam epitaxy;Journal of Alloys and Compounds;2021-02

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3