Homoepitaxial Hydride Vapor Phase Epitaxy Growth on GaN Wafers Manufactured by the Na-Flux Method-Reference-Cited by-同舟云学术

Homoepitaxial Hydride Vapor Phase Epitaxy Growth on GaN Wafers Manufactured by the Na-Flux Method

Published:2017-06-13 Issue:7 Volume:17 Page:3806-3811
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Imanishi Masayuki¹^ORCID,Yoshida Takehiro²,Kitamura Toshio²,Murakami Kosuke¹,Imade Mamoru¹,Yoshimura Masashi¹,Shibata Masatomo²,Tsusaka Yoshiyuki³,Matsui Junji⁴,Mori Yusuke¹

Affiliation:

1. Division of Electric, Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita-shi, Osaka 565-0871, Japan

2. SCIOCS, 880 Isagozawa-cho, Hitachi-shi, Ibaraki 319-1418, Japan

3. Graduate School of Material Science, University of Hyogo, 3-2-1 Kouto, Kamigori-cho, Ako-gun, Hyogo 678-1297, Japan

4. Synchrotron Radiation Nanotechnology Center, University of Hyogo, 1-490-2, Kouto, Shingu-cho, Tatsuno-shi, Hyogo 679-5165, Japan

Funder

Ministry of the Environment

Japan Science and Technology Agency

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.7b00388

Reference27 articles.

1. Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p -type GaN by Mg doping followed by low-energy electron beam irradiation

2. Prospects for LED lighting

3. Recent progress of GaN power devices for automotive applications

4. Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

5. Dislocation reduction in GaN crystal by advanced-DEEP

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