MOCVD Growth of Thick β-(Al)GaO Films with Fast Growth Rates
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, United States
2. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, United States
Funder
Air Force Office of Scientific Research
Semiconductor Research Corporation
Division of Electrical, Communications and Cyber Systems
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00779
Reference68 articles.
1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3
2. Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals
3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
4. Influence of metal choice on (010) β-Ga2O3Schottky diode properties
5. Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
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