Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
2. Materials Department, University of California, Santa Barbara, California 93106, USA
Funder
DOD | Defense Threat Reduction Agency
DOD | USAF | AFMC | Air Force Office of Scientific Research
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5010608
Reference47 articles.
1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
2. Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V
3. Ge-Doped ${\beta }$ -Ga2O3 MOSFETs
4. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
5. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs
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