Dislocation Pipe Diffusion and Solute Segregation during the Growth of Metastable GeSn
Author:
Affiliation:
1. Department of Engineering Physics, École Polytechnique de Montréal, C. P. 6079, Succ. Centre-Ville, Montréal, Québec H3C 3A7, Canada
2. Leibniz Institute of Surface Engineering (IOM), Permoserstr. 15, 04318 Leipzig, Germany
Funder
Canada Foundation for Innovation
Defence Research and Development Canada
Canada Research Chairs
Natural Sciences and Engineering Research Council of Canada
Mitacs
PRIMA Qu?bec
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.0c00270
Reference42 articles.
1. Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission
2. Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K
3. Strain engineering in epitaxial Ge1−xSnx: a path towards low-defect and high Sn-content layers
4. Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries
5. Si‐Ge‐Metal Ternary Phase Diagram Calculations
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