High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control-Reference-Cited by-同舟云学术

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High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Published:2023-05-31 Issue:7 Volume:23 Page:4921-4926
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Dong Shengyuan¹²^ORCID,Xing Yanhui¹,Deng Xuguang²,Zeng Chunhong²,Zhi Chengcheng²,Weng Jiaming²,Tang Wenbo²,Wang Binghui¹,Li Jiahao¹,Liu Tong²^ORCID,Han Jun¹,Zhang Baoshun²,Zeng Zhongming²^ORCID

Affiliation:

1. Key Laboratory of Opto-Electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing 100124, China

2. Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Funder

Beijing Municipal Natural Science Foundation

National Natural Science Foundation of China

Beijing Nova Program

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00146

Reference17 articles.

1. The intrinsic thermal conductivity of AIN

2. Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films

3. Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy

4. Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps

5. Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Relationship between Annealing and V/III Ratios during MNVPE of AlN Films;Crystal Growth & Design;2024-03-21

2. Three-step growth of AlN films on sapphire substrates by metal nitride vapor phase epitaxy;Journal of Crystal Growth;2024-01

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