Epitaxial Growth of (−201) β-Ga2O3 on (001) Diamond Substrates
Author:
Affiliation:
1. HH Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol, BS8 1TL, United Kingdom
Funder
Energy Frontier Research Centers
Engineering and Physical Sciences Research Council
Royal Academy of Engineering
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00972
Reference15 articles.
1. Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy
2. Investigations on epitaxy and lattice distortion of sputter deposited β-Ga2O3 layers on GaN templates
3. Two-step growth of β-Ga2O3 films on (100) diamond via low pressure chemical vapor deposition
4. High Performance ${\beta}$ -Ga2O3 Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate
5. Growth and characterization of α-Ga2O3 on sapphire and nanocrystalline β-Ga2O3 on diamond substrates by halide vapor phase epitaxy
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