Growth of Large Single Crystals of Copper Iodide by a Temperature Difference Method Using Feed Crystal Under Ambient Pressure-Reference-Cited by-同舟云学术

Growth of Large Single Crystals of Copper Iodide by a Temperature Difference Method Using Feed Crystal Under Ambient Pressure

Published:2018-09-27 Issue:11 Volume:18 Page:6748-6756
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Koyasu Satoshi¹,Umezawa Naoto²³^ORCID,Baniecki John D.⁴,Yamaguchi Akira¹^ORCID,Miyauchi Masahiro¹^ORCID

Affiliation:

1. Department of Materials and Chemical Technology, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan

2. International Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

3. Semiconductor R&D Center, Samsung Electronics, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Korea

4. Fujitsu Laboratories, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

Funder

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.8b01024

Reference24 articles.

1. P-type electrical conduction in transparent thin films of CuAlO2

2. Molecular-beam epitaxy of p-type m-plane GaN

3. As-doped p-type ZnO films grown on SiO2/Si by radio frequency magnetron sputtering

4. Growth Strategy and Physical Properties of the High Mobility P-Type CuI Crystal

5. On the Phase Transition in Cuprous Iodide

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