Growth Strategy and Physical Properties of the High Mobility P-Type CuI Crystal-Reference-Cited by-同舟云学术

Growth Strategy and Physical Properties of the High Mobility P-Type CuI Crystal

Published:2010-04-12 Issue:5 Volume:10 Page:2057-2060
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Chen Dagui¹,Wang Yongjing²,Lin Zhang²,Huang Jiakui¹,Chen XianZhi³,Pan Danmei²,Huang Feng¹

Affiliation:

1. Key Laboratory of Optoelectronic Material Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, PR China

2. State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, PR China

3. Ningbo Institute of Material Technology & Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, PR China

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg100270d

Reference22 articles.

1. High-Luminosity Blue and Blue-Green Gallium Nitride Light-Emitting Diodes

2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

3. Growth and applications of Group III-nitrides

4. Recent advances in ZnO materials and devices

5. The future of ZnO light emitters

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