Hole-Doping to a Cu(I)-Based Semiconductor with an Isovalent Cation: Utilizing a Complex Defect as a Shallow Acceptor-Reference-Cited by-同舟云学术

Hole-Doping to a Cu(I)-Based Semiconductor with an Isovalent Cation: Utilizing a Complex Defect as a Shallow Acceptor

Published:2022-09-01 Issue:36 Volume:144 Page:16572-16578
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Matsuzaki Kosuke¹^ORCID,Tsunoda Naoki²,Kumagai Yu²,Tang Yalun³,Nomura Kenji³⁴^ORCID,Oba Fumiyasu¹²^ORCID,Hosono Hideo¹⁵^ORCID

Affiliation:

1. Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan

2. Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan

3. Department of Electrical and Computer Engineering, Jacobs School of Engineering, University of California San Diego, 9500 Gilman Dr., La Jolla, California 92093, United States

4. Materials Science and Engineering Program, Jacobs School of Engineering, University of California San Diego, 9500 Gilman Dr., La Jolla, California 92093, United States

5. National Institute for Materials Science (NIMS) 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Murata Science Foundation

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/jacs.2c06283

Reference61 articles.