Controlled Nucleation Sites with Large Coverage Area for Continuous Monolayered WS<sub>2</sub> Growth by Using the CVD Process-Reference-Cited by-同舟云学术

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Controlled Nucleation Sites with Large Coverage Area for Continuous Monolayered WS₂ Growth by Using the CVD Process

Published:2023-10-02 Issue:11 Volume:23 Page:7744-7753
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Prasad Rakesh K.¹,Kumari Manisha¹,Singh Dilip K.¹^ORCID

Affiliation:

1. Department of Physics, Birla Institute of Technology Mesra, Ranchi 835215, India

Funder

Department of Science and Technology, Ministry of Science and Technology, India

UGC-DAE Consortium for Scientific Research Indore

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00527

Reference64 articles.

1. Two-dimensional semiconductors for transistors

2. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

3. Ultrasensitive photodetectors based on monolayer MoS2

4. Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

5. Two-dimensional materials and their prospects in transistor electronics

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1. Simulation-Based Investigation of Curtain Gas Effect on Metal-Organic Chemical Vapor Deposition Growth of Two-Dimensional Transition Metal Dichalcogenides;Crystal Growth & Design;2024-07-08

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