Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal–Organic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal–Organic Chemical Vapor Deposition

Published:2023-01-05 Issue:2 Volume:23 Page:782-791
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Streicher Isabel¹^ORCID,Leone Stefano¹,Manz Christian¹,Kirste Lutz¹,Prescher Mario¹,Waltereit Patrick¹,Mikulla Michael¹,Quay Rüdiger¹²,Ambacher Oliver³

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, 79108 Freiburg, Germany

2. Fritz-Hüttinger Chair for Energy-Efficient High-Frequency Electronics (EEH) Institute for Sustainable Systems Engineering (INATECH), University of Freiburg, Emmy-Noether-Strasse 2, 79110 Freiburg, Germany

3. Gips-Schüle Chair for Power Electronics, Institute for Sustainable Systems Engineering (INATECH), University of Freiburg, Emmy-Noether-Strasse 2, 79110 Freiburg, Germany

Funder

Bundesministerium f?r Bildung und Forschung

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.2c01013

Reference57 articles.

1. GaN-based power devices: Physics, reliability, and perspectives

2. A review of gallium nitride power device and its applications in motor drive

3. Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures

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