Isolated Silicon Dangling Bonds on a Water-Saturated n+-Doped Si(001)-2 × 1 Surface: An XPS and STM Study-Reference-Cited by-同舟云学术

Isolated Silicon Dangling Bonds on a Water-Saturated n+-Doped Si(001)-2 × 1 Surface: An XPS and STM Study

Published:2011-03-25 Issue:15 Volume:115 Page:7686-7693
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Gallet J.-J.¹,Bournel F.¹,Rochet F.¹,Köhler U.²,Kubsky S.³,Silly M.G.³,Sirotti F.³,Pierucci D.¹³

Affiliation:

1. Laboratoire de Chimie Physique, Matière et Rayonnement, Unité Mixte de Recherche CNRS 7614, Université Pierre et Marie Curie, 11 rue Pierre et Marie Curie, F-75231 Paris Cedex 05 France

2. Fakultät für Physik und Astronomie, Institut für Experimentalphysik IVAG Oberflächenphysik, Ruhr-Universität Bochum, NB 4/166, D-44780 Bochum, Germany

3. Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, BP 48, F-91192 Gif sur Yvette Cedex, France

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp201262x

Reference47 articles.

1. The interaction of water with solid surfaces: fundamental aspects revisited

2. Oxidation of silicon

3. Quantum chemical study of the elementary reactions in zirconium oxide atomic layer deposition

4. Hydroxyl group-induced adsorptions of 4-nitro benzoic acid on the Si(100) surface

5. STM and HREELS investigation of gas phase silanization on hydroxylated Si(100)

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