Pathways and intermediates in the reaction of tetraethoxysilane on silicon(100)-2 .times. 1-Reference-Cited by-同舟云学术

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Pathways and intermediates in the reaction of tetraethoxysilane on silicon(100)-2 .times. 1

Published:1993-02 Issue:2 Volume:9 Page:455-459
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Danner J. B.,Rueter M. A.,Vohs J. M.

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/la00026a016

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon Monomer Formation and Surface Patterning of Si(001)-2 × 1 Following Tetraethoxysilane Dissociative Adsorption at Room Temperature;The Journal of Physical Chemistry C;2014-01-14

2. Adsorption and reaction of SiH4 and oxygen on Pd(111);Surface Science;2008-02

3. The interaction of silanes with silicon single crystal surfaces: microscopic processes and structures;Surface Science Reports;2001-05

4. Thermal decomposition of tetraethoxysilane (TEOS) on Si(111)-(7×7);Applied Physics A: Materials Science & Processing;1998-03-01

5. Dissociative adsorption and site specificity in the initial stages of tetraethoxysilane (TEOS) interaction with Si(111)-(7×7);Surface Science;1998-03

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