Silicon Monomer Formation and Surface Patterning of Si(001)-2 × 1 Following Tetraethoxysilane Dissociative Adsorption at Room Temperature-Reference-Cited by-同舟云学术

Silicon Monomer Formation and Surface Patterning of Si(001)-2 × 1 Following Tetraethoxysilane Dissociative Adsorption at Room Temperature

Published:2014-01-14 Issue:4 Volume:118 Page:1887-1893
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Tissot Héloise¹²³,Gallet Jean-Jacques¹²³,Bournel Fabrice¹²³,Naitabdi Ahmed¹²³,Pierucci Debora¹²³,Bondino Federica⁴,Magnano Elena⁴,Rochet François¹²³,Finocchi Fabio⁵⁶

Affiliation:

1. Laboratoire de Chimie Physique Matière et Rayonnement, Sorbonne Universités, UPMC Univ Paris 06, UMR 7614, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France

2. CNRS, UMR 7614, LCPMR, 75005 Paris, France

3. Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, Gif-sur-Yvette, France

4. IOM-CNR, TASC Laboratory, s.s. 14 km 163.5, Basovizza, 34149 Trieste, Italy

5. Institut des Nano-Sciences de Paris, Sorbonne Universités, UPMC Univ Paris 06, UMR 7588, 4 place Jussieu, 75252 Paris Cedex 05, France

6. CNRS, UMR 7588, INSP, 75005 Paris, France

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp407411k

Reference42 articles.