Dissociative adsorption and site specificity in the initial stages of tetraethoxysilane (TEOS) interaction with Si(111)-(7×7)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference25 articles.
1. TEOS-based PECVD of silicon dioxide for VLSI applications
2. Model studies of dielectric thin film growth: Chemical vapor deposition of SiO2
3. Low-pressure deposition of high-quality SiO2 films by pyrolysis of tetraethylorthosilicate
4. Pathways and intermediates in the reaction of tetraethoxysilane on silicon(100)-2 .times. 1
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1. Rapid and alternative fabrication method for microfluidic paper based analytical devices;Talanta;2016-10
2. Dissociation of Ethoxysilane and Methoxysilane on Si(001)-2 × 1 and Si(111)-7 × 7 at Room Temperature: A Comparative Study Using Synchrotron Radiation Photoemission;The Journal of Physical Chemistry C;2014-10-10
3. Effects of oxygen on electron beam induced deposition of SiO2 using physisorbed and chemisorbed tetraethoxysilane;Applied Physics Letters;2012-11-19
4. A Synchrotron Radiation X-ray Photoemission Spectroscopy Study of n-Propyltriethoxysilane Adsorption on Si(001)-2 × 1 at Room Temperature;The Journal of Physical Chemistry C;2010-11-12
5. Observations of Photo-Dissociation Reaction of TEOS Molecules on Silicon Clean Surfaces;IEEJ Transactions on Electronics, Information and Systems;2004
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