Dual Electrical Behavior of Multivalent Metal Cation-Based Oxide and Its Application to Thin-Film Transistors with High Mobility and Excellent Photobias Stability-Reference-Cited by-同舟云学术

Dual Electrical Behavior of Multivalent Metal Cation-Based Oxide and Its Application to Thin-Film Transistors with High Mobility and Excellent Photobias Stability

Published:2015-03-10 Issue:11 Volume:7 Page:6118-6124
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yun Myeong Gu¹,Ahn Cheol Hyoun¹,Cho Sung Woon¹,Kim So Hee¹,Kim Ye Kyun¹,Cho Hyung Koun¹

Affiliation:

1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 440-746, Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am5085836

Reference40 articles.

1. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

2. Transparent thin-film transistors with zinc indium oxide channel layer

3. Thin-film transistors with amorphous indium gallium oxide channel layers

4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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