Modeling Transport in Ultrathin Si Nanowires: Charged versus Neutral Impurities-Reference-Cited by-同舟云学术

Modeling Transport in Ultrathin Si Nanowires: Charged versus Neutral Impurities

Published:2008-08-02 Issue:9 Volume:8 Page:2825-2828
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Rurali Riccardo¹,Markussen Troels¹,Suñé Jordi¹,Brandbyge Mads¹,Jauho Antti-Pekka¹

Affiliation:

1. Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain, Department of Micro and Nanotechnology, NanoDTU, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark, and Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, FI-02014 HUT, Finland

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl801409m

Reference18 articles.

1. Surface Segregation and Backscattering in Doped Silicon Nanowires

2. Conductance, Surface Traps, and Passivation in Doped Silicon Nanowires

3. Electronic transport through Si nanowires: Role of bulk and surface disorder

4. Scaling Theory Put into Practice: First-Principles Modeling of Transport in Doped Silicon Nanowires

5. Mesoscopic Transport in Chemically Doped Carbon Nanotubes

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