Effects of vacancies on the thermal conductivity of Si nanowires-Reference-Cited by-同舟云学术

Effects of vacancies on the thermal conductivity of Si nanowires

Author:

Túnica Marc¹²^ORCID,Floris Paolo Sebastiano¹^ORCID,Torres Pol¹³^ORCID,Rurali Riccardo¹^ORCID

Affiliation:

1. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de Bellaterra, 08193 Bellaterra, Barcelona, Spain

2. Laboratoire de Physique des Solides, Université Paris-Saclay, CNRS, Orsay 91405, France

3. Eurecat, Centre Tecnològic de Catalunya, Unit of Applied Artificial Intelligence, Av. Universitat Autònoma, 23, 08290 Cerdanyola del Vallès, Spain

Abstract

Vacancy concentration and distribution are versatile degrees of freedom to tailor the thermal conductivity in nanowires.

Funder

Generalitat de Catalunya

Ministerio de Ciencia e Innovación

H2020 Marie Skłodowska-Curie Actions

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

Reference45 articles.

1. R. S.Muller and T. I.Kamins , Device Electronics for Integrated Circuirs , John Wiley & Sons , Hoboken, NJ , 1986

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