Fermi-Level Unpinning Technique with Excellent Thermal Stability for n-Type Germanium-Reference-Cited by-同舟云学术

Fermi-Level Unpinning Technique with Excellent Thermal Stability for n-Type Germanium

Published:2017-10-04 Issue:41 Volume:9 Page:35988-35997
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Gwang-Sik^ORCID,Kim Seung-Hwan^ORCID,Lee Tae In¹,Cho Byung Jin¹^ORCID,Choi Changhwan²^ORCID,Shin Changhwan³^ORCID,Shim Joon Hyung^ORCID,Kim Jiyoung⁴^ORCID,Yu Hyun-Yong^ORCID

Affiliation:

1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea

2. Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Korea

3. School of Electrical and Computer Engineering, University of Seoul, Seoul 02504, Korea

4. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States

Funder

National Research Foundation of Korea

Korea Evaluation Institute of Industrial Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b10346

Reference34 articles.

1. Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position toward the conduction band edge

2. Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface

3. Fermi-level pinning and charge neutrality level in germanium

4. Reduction in Specific Contact Resistivity to $ \hbox{n}^{+}$ Ge Using $\hbox{TiO}_{2}$ Interfacial Layer

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