In-Plane Anisotropies of Polarized Raman Response and Electrical Conductivity in Layered Tin Selenide-Reference-Cited by-同舟云学术

In-Plane Anisotropies of Polarized Raman Response and Electrical Conductivity in Layered Tin Selenide

Published:2017-03-28 Issue:14 Volume:9 Page:12601-12607
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Xu Xiaolong¹²,Song Qingjun¹²,Wang Haifeng³⁴,Li Pan¹²,Zhang Kun¹²,Wang Yilun¹²,Yuan Kai¹²,Yang Zichen¹²,Ye Yu¹²^ORCID,Dai Lun¹²^ORCID

Affiliation:

1. State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China

2. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

3. National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

4. Department of Physics, College of Science, Shihezi University, Xinjiang 832003, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b00782

Reference25 articles.

1. Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals

2. Low thermal conductivity and triaxial phononic anisotropy of SnSe

3. Influence of temperature and pressure on the electronic transitions in SnS and SnSe semiconductors

4. Single-Layer Single-Crystalline SnSe Nanosheets

5. A Precursor-Limited Nanoparticle Coalescence Pathway for Tuning the Thickness of Laterally-Uniform Colloidal Nanosheets: The Case of SnSe

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