In Situ Formation of SnSe2/SnSe Vertical Heterostructures toward Polarization Selectable Band Alignments

Author:

Ge Rui1ORCID,Liu Beituo1,Sui Fengrui1ORCID,Zheng Yufan1,Yu Yilun1,Wang Kaiqi1,Qi Ruijuan123ORCID,Huang Rong14ORCID,Yue Fangyu14ORCID,Chu Junhao15ORCID,Duan Chun‐Gang14ORCID

Affiliation:

1. Key Laboratory of Polar Materials and Devices (MOE) School of Physics and Electronic Science East China Normal University Shanghai 200241 China

2. National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

3. Chongqing Key Laboratory of Precision Optics Chongqing Institute of East China Normal University Chongqing 401120 China

4. Shanghai Center of Brain‐Inspired Intelligent Materials and Devices East China Normal University Shanghai 200241 China

5. National Laboratory of Infrared Physics Shanghai Institute of Technical Physics Shanghai 200083 China

Abstract

Abstract2D van der Waals (vdW) layered semiconductor vertical heterostructures with controllable band alignment are highly desired for nanodevice applications including photodetection and photovoltaics. However, current 2D vdW heterostructures are mainly obtained via mechanical exfoliation and stacking process, intrinsically limiting the yield and reproducibility, hardly achieving large‐area with specific orientation. Here, large‐area vdW‐epitaxial SnSe2/SnSe heterostructures are obtained by annealing layered SnSe. These in situ Raman analyses reveal the optimized annealing conditions for the phase transition of SnSe to SnSe2. The spherical aberration‐corrected transmission electron microscopy investigations demonstrate that layered SnSe2 epitaxially forms on SnSe surface with atomically sharp interface and specific orientation. Optical characterizations and theoretical calculations reveal valley polarization of the heterostructures that originate from SnSe, suggesting a naturally adjustable band alignment between type‐II and type‐III, only relying on the polarization angle of incident lights. This work not only offers a unique and accessible approach to obtaining large‐area SnSe2/SnSe heterostructures with new insight into the formation mechanism of vdW heterostructures, but also opens the intriguing optical applications based on valleytronic nanoheterostructures.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Chongqing Municipality

Publisher

Wiley

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