Fast Growth of GaN Epilayers via Laser-Assisted Metal–Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications
Author:
Affiliation:
1. School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
2. Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB-CNRS), 87 Avenue du Docteur Albert Schweitzer, F-33608 Pessac Cedex, Pessac, France
Funder
Division of Civil, Mechanical and Manufacturing Innovation
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.7b03554
Reference64 articles.
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5. Bulk GaN crystals grown by HVPE
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