Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy-Reference-Cited by-同舟云学术

Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy

Published:2017-07-06 Issue:28 Volume:9 Page:24348-24356
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhao Peng¹,Azcatl Angelica¹,Gomeniuk Yuri Y.²³,Bolshakov Pavel¹,Schmidt Michael²,McDonnell Stephen J.⁴,Hinkle Christopher L.¹,Hurley Paul K.²,Wallace Robert M.¹^ORCID,Young Chadwin D.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, The University of Texas at Dallas, 800 W Campbell Rd., Richardson, Texas 75080, United States

2. Tyndall National Institute, Department of Chemistry, University of College Cork, Lee Maltings, Dyke Parade, Cork, Ireland

3. V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, pr. Nauki, Kyiv, Ukraine

4. Department of Materials Science and Engineering, The University of Virginia, Charlottesville, Virginia 22903, United States

Funder

Science Foundation Ireland

Division of Electrical, Communications and Cyber Systems

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b06204

Reference51 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

3. Electronics based on two-dimensional materials

4. Mobility engineering and a metal–insulator transition in monolayer MoS2

5. Single-layer MoS2 transistors

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The future of two-dimensional semiconductors beyond Moore’s law;Nature Nanotechnology;2024-07

2. High‐κ Dielectric (HfO₂)/2D Semiconductor (HfSe₂) Gate Stack for Low‐Power Steep‐Switching Computing Devices;Advanced Materials;2024-04-08

3. Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer;npj 2D Materials and Applications;2024-03-27

4. Investigation of the interface state characteristics of the Al/Al2O3/Ge/p-Si heterostructure over a wide frequency range by capacitance and conductance measurements;Materials Science in Semiconductor Processing;2024-02

5. High-quality HfO2/HfSe2 gate stack for low-power steep-switching computing devices;2023-09-28