Low-Temperature One-Step Growth of AlON Thin Films with Homogenous Nitrogen-Doping Profile by Plasma-Enhanced Atomic Layer Deposition-Reference-Cited by-同舟云学术

Low-Temperature One-Step Growth of AlON Thin Films with Homogenous Nitrogen-Doping Profile by Plasma-Enhanced Atomic Layer Deposition

Published:2017-10-25 Issue:44 Volume:9 Page:38662-38669
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chen Hong-Yan¹,Lu Hong-Liang¹^ORCID,Chen Jin-Xin¹,Zhang Feng²,Ji Xin-Ming¹,Liu Wen-Jun¹,Yang Xiao-Feng¹,Zhang David Wei¹

Affiliation:

1. State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China

2. Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Funder

Ministry of Science and Technology of the People's Republic of China

Shanghai Municipal Education Commission

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b12262

Reference36 articles.

1. Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon

2. Nitrogen bonding, stability, and transport in AlON films on Si

3. Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics

4. Enhancing the thermal conductivity of polymer-assisted deposited Al 2 O 3 film by nitrogen doping

5. Metal-organic chemical vapor deposition of aluminium oxynitride from propylamine–dimethylaluminium hydride and oxygen: growth mode dependence and performance optimization

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