Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer-Reference-Cited by-同舟云学术

Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer

Published:2017-04-04 Issue:15 Volume:9 Page:13278-13285
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Shin Kwan Yup¹,Tak Young Jun¹,Kim Won-Gi¹,Hong Seonghwan¹,Kim Hyun Jae¹^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea

Funder

Samsung

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b00257

Reference36 articles.

1. Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples

2. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

3. A review of multi-stacked active-layer structures for solution-processed oxide semiconductor thin-film transistors

4. A Novel Amorphous InGaZnO Thin Film Transistor Structure without Source/Drain Layer Deposition

5. High Stability InGaZnO[sub 4] Thin-Film Transistors Using Sputter-Deposited PMMA Gate Insulators and PMMA Passivation Layers

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