Epitaxy of Ferroelectric P(VDF-TrFE) Films via Removable PTFE Templates and Its Application in Semiconducting/Ferroelectric Blend Resistive Memory
Author:
Affiliation:
1. Department of Materials Science, Fudan University, Shanghai 200433, China
2. Institute of Electrical Engineering Physics, Saarland University, Saarbrücken 66111, Germany
3. School of Microelectronics, Fudan University, Shanghai 200433, China
Funder
Science and Technology Commission of Shanghai Municipality
National Natural Science Foundation of China
China Academy of Engineering Physics
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.7b01571
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4. Layer-Thinning Effects on Ferroelectricity and the Ferroelectric-to-Paraelectric Phase Transition of Vinylidene Fluoride−Trifluoroethylene Copolymer Layers
5. Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel
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