Characteristics of Reduced Graphene Oxide Quantum Dots for a Flexible Memory Thin Film Transistor-Reference-Cited by-同舟云学术

Characteristics of Reduced Graphene Oxide Quantum Dots for a Flexible Memory Thin Film Transistor

Published:2017-05-02 Issue:19 Volume:9 Page:16375-16380
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Yo-Han¹,Lee Eun Yeol²,Lee Hyun Ho¹^ORCID,Seo Tae Seok²

Affiliation:

1. Department of Chemical Engineering, Myongji University, 116 Myongji-ro, Cheoin-gu, Yongin-si, Gyeonggi-do 17058, Republic of Korea

2. Department of Chemical Engineering, College of Engineering, Kyung Hee University, 1 Seochon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 17104, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b00714

Reference21 articles.

1. The rise of graphene

2. Two-dimensional gas of massless Dirac fermions in graphene

3. A roadmap for graphene

4. Facile Synthetic Method for Pristine Graphene Quantum Dots and Graphene Oxide Quantum Dots: Origin of Blue and Green Luminescence

5. Colloidal Graphene Quantum Dots

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