Ultrahigh Responsivity Visible and Infrared Detection Using Silicon Nanowire Phototransistors-Reference-Cited by-同舟云学术

Ultrahigh Responsivity Visible and Infrared Detection Using Silicon Nanowire Phototransistors

Published:2010-05-14 Issue:6 Volume:10 Page:2117-2120
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Zhang Arthur¹,Kim Hongkwon¹,Cheng James¹,Lo Yu-Hwa¹

Affiliation:

1. Department of Electrical and Computer Engineering, Jacobs School of Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0409

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl1006432

Reference21 articles.

1. Germanium near infrared detector in silicon on insulator

2. Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon

3. Optical absorption in heavily doped silicon

4. High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide

5. Scanning Photocurrent Imaging and Electronic Band Studies in Silicon Nanowire Field Effect Transistors

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