Optical absorption in heavily doped silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.23.5531/fulltext
Reference25 articles.
1. Energy gap in Si and Ge: Impurity dependence
2. Heavily doped semiconductors and devices
3. Infrared Absorption in Heavily Doped n-Type Si
4. CRITICAL CONCENTRATION FOR THE METAL-NON METAL TRANSITION IN n-TYPE GERMANIUM AND SILICON
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